Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs

ANNs in Bias Dependant Small-Signal and Noise Modeling of Microwave FETs

In this paper an efficient procedure for determination of small-signal and noise behavior of microwave transistors for various bias conditions is proposed. An empirical transistor noise model based on an equivalent circuit (improvement of Pospieszalski’s noise model) is considered. Since it is necessary to extract values of the model equivalent circuit for each bias point (which requires the me...

Bias-temperature instability in single-layer graphene field-effect transistors

Distributed Small Signal Modelling for Multi-port GaAs FETs

The design of Microwave and Millimeter-wave Monolithic Integrated Circuits (MMIC) requires a meaningful and accurate characterization of the electron device along with information about the changes caused by the process parameter variations. Meanwhile, increasing application of multi-port GaAs FETs, adopted for side-biasing in the higher level of MMIC integration, has led to increased research ...

RF SoS MOSFET Small Signal Model Extraction

Access to an accurate small-signal equivalent circuit model is an important step in circuit design. Reliable small signal extraction procedures readily useable by the designer are now required in millimetre-wave designs because many foundry process development kits do not support millimetre wave frequency design. The extraction procedures successful at lower frequencies for lumped circuit extra...

Graphene based FETs

The extraordinary electronic properties along with excellent optical, mechanical, thermodynamic properties have led to a lot of interest in its possible applications. Due to zero band gap in large area Graphene, its usability as channel material in MOSFETs has been limited. This paper presents the basic physics of Graphene and describes a few methods used by researchers to create band gaps in G...